cha3666 - snf ref. : dscha3666 - snf2353 - 18 dec 12 1 / 10 specifications subject to change without notice united monolithic semiconductors s.a.s. bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 5.8 - 16ghz low noise amplifier gaas monolithic microwave ic in smd package description the cha3666 - snf is a two - stage self biased wide band monolithic low noise amplifier. the circuit is manufactured with a standard phemt process: 0.25m gate length, via holes through the substrate, air bridges and electron beam gate lithography. it is supplied in lead - free, hermetic package compatible for space application. main features rd order intercept point main electrical characteristics tamb. = + 25c symbol parameter min typ max unit nf noise figure 2.1 2.8 db g smal l signal gain 16 20 db ip3 3rd order intercept point 24 dbm esd protections: electrostatic discharge sensitive device observe handling precautions!
cha3666 - snf 5.8 - 16ghz low noise amplifier ref. : dscha3666 - snf2353 - 18 dec 12 2 / 10 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 vi llebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 electrical characteristics tamb. = + 25c , vd = +4.0 v (1) symbol parameter min typ max unit fop operating frequency range 5.8 16 ghz g smal l signal gain 16 20 db ? (1) these values are representative of on board measurements as defined on the drawing 96446 (see below). absolute maximum ratings (1) tamb.= + 25c symbol parameter values unit vd drain bias voltage 4.5 v pin rf input power 10 dbm top operating temperature range (2) - 40 to +85 c tj junction temperature (3) 175 c tstg storage temperature range - 55 to +125 c tstg storage temperature range - 55 to +150 c (1) operation of this device above anyone of these parameters may cause permanent damage. (2) top = package ground paddle back side temperature (3) thermal resistance channel to ground paddle =214c/w for t ground paddle = +85c
5.8 - 16ghz low noise amplifier cha3666 - snf ref. : dscha3666 - snf2353 - 18 dec 12 3 / 1 0 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 typical package sij parameters for low current configuration in 96446 board - in connector plane temp = +25c, vd= +4v, typical id=80ma
cha3666 - snf 5.8 - 16ghz low noise amplifier ref. : dscha3666 - snf2353 - 18 dec 12 4 / 10 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 vi llebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 typical on wafer measurements temp = +25c, vd=4v (id=80ma) measurements in the connector planes, using the proposed land pattern & board 96446. gain rlosses & nf @vd=4v nf@vd=4v (test board losses included) gain nf s11 s22
5.8 - 16ghz low noise amplifier cha3666 - snf ref. : dscha3666 - snf2353 - 18 dec 12 5 / 10 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 typical on wafer measurements temp = +25c, vd=4v (id=80ma) measurements in the connector planes, using the proposed land pattern & board 96446. output power at 1db compression versus frequency c/i3 versus output power
cha3666 - snf 5.8 - 16ghz low noise amplifier ref. : dscha3666 - snf2353 - 18 dec 12 6 / 10 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 vi llebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 typical on wafer measurements temp = +25c, vd=4v (id=80ma) measurements in the connector planes, using the proposed land pattern & board 96446. output ip3 versus output power
5.8 - 16ghz low noise amplifier cha3666 - snf ref. : dscha3666 - snf2353 - 18 dec 12 7 / 10 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 package outline (1) 1 - gnd 5 - rfin 9 - gnd 2 - vd1 - vd2 6 - gnd 10 - gnd 3 - gnd 7 - gnd 11 - vd1 - vd2 4 - gnd 8 - rfout 12 - gnd (1) pin 2 and 11 should be chosen alternatively
cha3666 - snf 5.8 - 16ghz low noise amplifier ref. : dscha3666 - snf2353 - 18 dec 12 8 / 10 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 vi llebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 proposed assembly board 96446 for the 12l - glassmetal package products characterization
5.8 - 16ghz low noise amplifier cha3666 - snf ref. : dscha3666 - snf2353 - 18 dec 12 9 / 10 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 dc schematic this chip is self - biased, and flexibility is provided by the access to number of leads. the internal dc electrical schematic is given in order to use these leads in a safe way. standard biasing: low noise and low consumption: vd = 4v idd = 80ma & pout - 1db = 16dbm typical. rfin rfout vd1 vd2 1.5k 3.1k 0.3k 0.3k 40 2.5 20 20 90 90 p1 p2 n2 8
cha3666 - snf 5.8 - 16ghz low noise amplifier ref. : dscha3666 - snf2353 - 18 dec 12 10 / 10 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 vi llebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 recommended environmental management ums products are compliant with the regulation in particular with the directives rohs n2011/65 and reach n1907/2006. more environmental data are available in the application note an0019 also available at http://www.ums - gaas.com . recommended esd management refer to the application note an0020 available at http://www.ums - gaas.com for esd sensitivity and handling recommendations for the ums package products. ordering information glass/metal 12l hermetic package : cha3666 - snf /xy tray: xy = 20 information furnished is believed to be accurate and reliable. however united monolithic semiconductors s.a.s. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent righ ts of united monolithic semiconductors s.a.s. . specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. united monolithic semiconductors s.a.s. products are not authorised for use as critical components in life support devices or systems without express written approval from united monolithic semiconductors s.a.s.
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